Bibliography

Veeco CNT ALD customers are at the leading edge of ALD research around the world resulting in more publications than on any other commercial ALD platforms.

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Analysis of the breakdown spot spatial distribution in Pt/HfO2/Pt capacitors using nearest neighbor statistics

Author(s): Saura, X: Su��, J: Monaghan, S.: Hurley, P K: Miranda, E.

Published: 2013

Web link: http://link.aip.org/link/JAPIAU/v114/i15/p154112/s1&Agg=doi

Improvement in electrical characteristics of HfO2 gate dielectrics treated by remote NH3 plasma

Author(s): Huang, Li-Tien: Chang, Ming-Lun: Huang, Jhih-Jie: Lin, Hsin-Chih: Kuo, Chin-Lung: Lee, Min Hung: Liu, Chee Wee: Chen, Miin-Jang

Published: 2013

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0169433212020557

Electrochemical Monitoring of TiO2 Atomic Layer Deposition by Chronoamperometry and Scanning Electrochemical Microscopy

Author(s): Satpati, A K, Arroyo-Curra?s, N, Ji, L, Yu, E T and Bard, A J

Published: 2013

Web link: http://bard.cm.utexas.edu/resources/Bard-Reprint/929.pdf

Effect of hydrogen participation on the improvement in electrical characteristics of HfO2 gate dielectrics by post-deposition remote N2, N2/H2, and NH3 plasma treatments

Author(s): Huang, Li-Tien: Chang, Ming-Lun: Huang, Jhih-Jie: Kuo, Chin-Lung: Lin, Hsin-Chih: Liao, Ming-Han: Lee, Min Hung: Chen, Miin-Jang

Published: 2013

Web link: http://iopscience.iop.org/0022-3727/46/5/055103/article/

High permittivity gadolinium oxide deposited on indium phosphide by high-pressure sputtering without interface treatments

Author(s): San Andr�s, Enrique, Pampill�n, Mar�a ?ngela, Feijoo, Pedro Carlos, P�rez, Ra�l and Ca�adilla, Carmina

Published: 2013

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0167931713003626

A Nanocoax-Based Electrochemical Sensor

Author(s): Rizal, Binod, Archibald, Michelle M, Connolly, Timothy, Shepard, Stephen, Burns, Michael J, Chiles, Thomas C and Naughton, Michael J

Published: 2013

Web link: http://pubs.acs.org/doi/abs/10.1021/ac402441x

Improvement of Capacitance Equivalent Thickness, Leakage Current, and Interfacial State Density Based on Crystallized High-K Dielectrics/Nitrided Buffer Layer Gate Stacks

Author(s): Huang, Jhih-Jie: Huang, Li-Tien: Tsai, Meng-Chen: Lee, Min Hung: Chen, Miin-Jang

Published: 2013

Web link: http://jss.ecsdl.org/content/2/12/P524.full

Performance enhancement of metal nanowire transparent conducting electrodes by mesoscale metal wires

Author(s): Hsu, Po-Chun, Wang, Shuang, Wu, Hui, Narasimhan, Vijay K, Kong, Desheng, Ryoung Lee, Hye and Cui, Yi

Published: 2013

Web link: http://www.nature.com/doifinder/10.1038/ncomms3522

Atomic Layer Deposition of a Sub-Monolayer Catalyst for the Enhanced Photoelectrochemical Performance of Water Oxidation with Hematite

Author(s): Riha, Shannon C, Klahr, Benjamin Michael, Tyo, Eric C, Seifert, Soenke, Vajda, Stefan, Pellin, Michael J, Hamann, Thomas William and Martinson, Alex Brandon Fletcher

Published: 2013

Web link: http://pubs.acs.org/doi/abs/10.1021/nn305639z

Determination of thickness and composition of high-k dielectrics using high-energy electrons

Author(s): Grande, P L, Vos, M, Venkatachalam, D K, Nandi, S K and Elliman, R G

Published: 2013

Web link: http://link.aip.org/link/APPLAB/v103/i7/p071911/s1&Agg=doi