Self-Aligned Gate-First In0.7Ga0.3As n-MOSFETs with an InP Capping Layer for Performance Enhancement
Author(s): Gong, Xiao, Ivana, Chin, Hock-Chun, Zhu, Zhu, Lin, You-Ru, Ko, Chih-Hsin, Wann, Clement H and Yeo, Yee-Chia
Published: 2011
Author(s): Raf�, J M, Zabala, M, Beldarrain, O and Campabadal, F
Published: 2011
Properties and characterization of ALD grown dielectric oxides for MIS structures
Author(s): Gieraltowska, S, Sztenkiel, D, Guziewicz, E, Godlewski, M, Luka, G, Witkowski, B S, Wachnicki, L, Lusakowska, E, Dietl, T and Sawicki, M
Published: 2011
Web link: http://arxiv.org/abs/1107.5401
Cathodoluminescence of Irradiated Hafnium Dioxide
Author(s): Purcell, Emily A
Published: 2011
Web link: http://oai.dtic.mil/oai/oai?verb=getRecord&metadataPrefix=html&identifier=ADA538491
Electron Irradiation Effects on Atomic Layer Deposited High-k Gate Dielectrics
Author(s): Garc�a, H�ctor, Cast�n, Helena, Due�as, Salvador, Bail�n, Luis, Campabadal, Francesca, Rafi, Joan Marc, Zabala, Miguel, Beldarrain, Oihane, Ohyama, Hidenori, Takakura, Kenichirou and Tsunoda, Isao
Published: 2011
Epitaxial ZnO Films Grown at Low Temperature for Novel Electronic Application
Author(s): Prze?dzieckaa, E, Guziewiczb, M and Wierzbickaa, A
Published: 2011
Epitaxial graphene surface preparation for atomic layer deposition of Al< inf> 2 O< inf> 3
Author(s): Garces, N Y, Wheeler, V D and Hite, J K
Published: 2011
Web link: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5928305
Impact of ageing on AlOx layer passivation properties for advanced cell architectures
Author(s): Penaud, J, Rothschild, A. and Jaffrennou, P
Published: 2011
Web link: http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6186243
Characterisation of HfO2/Si/SiC MOS Capacitors
Author(s): Gammon, Peter M, P�rez-Tom�s, Amador, Jennings, Michael R, Guy, Owen J, Rimmer, N, Llobet, J, Mestres, Narcis, Godignon, Phillippe, Placidi, Marcel, Zabala, M, Covington, James A and Mawby, Philip A
Published: 2011