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Author(s): Nayfeh, Osama M: Chin, Matthew: Ervin, Matthew: Wilson, James: Ivanov, Tony: Proie, Robert: Nichols, Barbara M: Crowne, Frank: Kilpatrick, Stephen: Dubey, Madan: Nambaru, Raju: Ulrich, Marc

Published: 2011

Web link: http://oai.dtic.mil/oai/oai?verb=getRecord&metadataPrefix=html&identifier=ADA538063

Roles of thermally-induced vertical phase segregation and crystallization on the photovoltaic performance of bulk heterojunction inverted polymer solar cells

Author(s): Cheun, Hyeunseok, Berrigan, John D, Zhou, Yinhua, Fenoll, Mathieu, Shim, Jaewon, Fuentes-Hernandez, Canek, Sandhage, Kenneth H and Kippelen, Bernard

Published: 2011

Web link: http://pubs.rsc.org/en/content/articlehtml/2011/ee/c1ee01316e

Effects of post-deposition rapid thermal annealing on aluminum-doped ZnO thin films grown by atomic layer deposition

Author(s): Cheng, Yung-Chen

Published: 2011

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0169433211011913

Radio-Frequency Transistors Using Chemical-Vapor-Deposited Monolayer Graphene: Performance, Doping, and Transport Effects

Author(s): Nayfeh, Osama M

Published: 2011

Web link: http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=5962355

Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer

Author(s): Monaghan, S.: O?Mahony, A: Cherkaoui, K: OConnor, E: Povey, I. M.: Nolan, M G: O?Connell, D: Pemble, M E: Hurley, P K: Provenzano, G: Crupi, F: Newcomb, S B

Published: 2011

Web link: http://link.aip.org/link/JVTBD9/v29/i1/p01A807/s1&Agg=doi

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

Author(s): Chalker, Paul R, Marshall, Paul A, Romani, Simon, Rosseinsky, Matthew J, Rushworth, Simon, Williams, Paul A, Buckett, John, McSporran, Neil and Ridealgh, John

Published: 2011

Web link: http://journals.cambridge.org/abstract_S1946427411007111

Comparative study of AlGaN/GaN metal?oxide?semiconductor heterostructure field-effect transistors with Al< sub> 2 O< sub> 3 and HfO< sub> 2 ?

Author(s): Miyazaki, E, Goda, Y, Kishimoto, S and Mizutani, T

Published: 2011

Web link: http://www.sciencedirect.com/science/article/pii/S0038110111001511

Performance of strained AlInN/AlN/GaN HEMTs with Si3N4 and ultra-thin Al2O3 passivation

Author(s): Chabak, K D: Walker, Jr, D E: Trejo, M: Crespo, A

Published: 2011

Web link: http://www.mantech.org/Digests/2011/papers/7b.3.pdf

Atomic Layer Deposition Ultra-Barriers for Electronic Applications – Strategies and Implementation

Author(s): Carcia, P F, McLean, R S, Sauer, B. B. and Reilly, M H