Bibliography

Veeco CNT ALD customers are at the leading edge of ALD research around the world resulting in more publications than on any other commercial ALD platforms.

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Temperature dependent thermal conductivity of polycrystalline ZnO films

Author(s): Alvarez-Quintana, J, Marti?nez, E, Perez-Tijerina, E., Pe?rez-Garci?a, S A and Rodri?guez-Viejo, J

Published: 2010

Web link: http://link.aip.org/link/JAPIAU/v107/i6/p063713/s1&Agg=doi

Change in carrier type in high- kgate carbon nanotube field-effect transistors by interface fixed charges

Author(s): Moriyama, N, Ohno, Y, Kitamura, T, Kishimoto, S and Mizutani, T

Published: 2010

Web link: http://stacks.iop.org/0957-4484/21/i=16/a=165201?key=crossref.6d61b6c83598de82e3a426c772e29772

Interfacial Chemistry of Oxides on III-V Compound Semiconductors

Author(s): Milojevic, M, Hinkle, C L and Vogel, E M

Published: 2010

Web link: http://books.google.com/books?hl=en&lr=&id=sk2SrZH3xEcC&oi=fnd&pg=PA131&dq=Cambridge+Nanotech+((ALD)+savannah)&ots=uNxsuP1Dzp&sig=GUOqtGF220yDEF0kRyjeUnqB9LY

Metal Oxide Microrings with Femtoliter Capacity for Raman Microspectroscopy

Author(s): Alessandri, Ivano and Depero, Laura E

Published: 2010

Web link: http://pubs.acs.org/doi/abs/10.1021/am900904k

Writing, Self?Healing, and Self?Erasing on Conductive Pressure?Sensitive Adhesives

Author(s): Alessandri, I

Published: 2010

Web link: http://onlinelibrary.wiley.com/doi/10.1002/smll.201000638/full

Self-aligned ALD AlOx T-gate insulator for gate leakage current suppression in SiNx-passivated AlGaN/GaN HEMTs

Author(s): Meyer, David J, Bass, Robert, Katzer, D Scott, Deen, David A, Binari, Steven C, Daniels, Kevin M and Eddy Jr, Charles R

Published: 2010

Web link: http://dx.doi.org/10.1016/j.sse.2010.05.024

Tubular magnetic nanostructures based on glancing angle deposited templates and atomic layer deposition

Author(s): Albrecht, Ole, Zierold, Robert, Patzig, Christian, Bachmann, Julien, Sturm, Chris, Rheinl�nder, Bernd, Grundmann, Marius, G�rlitz, Detlef, Rauschenbach, Bernd and Nielsch, Kornelius

Published: 2010

Web link: http://doi.wiley.com/10.1002/pssb.200945560

Dep�sito de pel�culas ultradelgadas de �xido de zinc (ZnO) por ALD

Author(s): Mart�nez, G and Flores, J

Published: 2010

Web link: http://eprints.uanl.mx/290/

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

Author(s): Abermann, S, Henkel, C, Bethge, O, Pozzovivo, G, Klang, P and Bertagnolli, E

Published: 2010

Web link: http://dx.doi.org/10.1016/j.apsusc.2010.03.049

On the choice of the test structure for the electrical characterization of dielectrics for silicon solar cells

Author(s): Loozen, X, O?Sullivan, B J and Rothschild, A.

Published: 2010

Web link: http://onlinelibrary.wiley.com/doi/10.1002/pssr.201004361/full