Bibliography

Veeco CNT ALD customers are at the leading edge of ALD research around the world resulting in more publications than on any other commercial ALD platforms.

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Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors

Author(s): Kumar, Suhas: Wang, Ziwen: Huang, Xiaopeng: Kumari, Niru: Davila, Noraica: Strachan, John Paul: Vine, David: Kilcoyne, A L David: Nishi, Yoshio: Williams, R Stanley

Published: 2016

Web link: http://pubs.acs.org/doi/abs/10.1021/acsnano.6b06275

Efficient WO3 photoanodes fabricated by pulsed laser deposition for photoelectrochemical water splitting with high faradaic efficiency

Author(s): F�brega, C, Murcia-L�pez, S, Monllor-Satoca, D, Prades, J D, Hern�ndez-Alonso, M D, Penelas, G, Morante, J R and Andreu, T

Published: 2016

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0926337316301448

Interface Engineering in Hybrid Quantum Dot?2D Phototransistors

Author(s): Kufer, Dominik, Lasanta, Tania, Bernechea, Maria, Koppens, Frank H L and Konstantatos, Gerasimos

Published: 2016

Web link: http://pubs.acs.org/doi/abs/10.1021/acsphotonics.6b00299

Parallel preparation of plan-view transmission electron microscopy specimens by vapor-phase etching with integrated etch stops

Author(s): English, Timothy S, Provine, J., Marshall, Ann F, Koh, Ai Leen and Kenny, Thomas W

Published: 2016

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0304399116300365

Protected Light-Trapping Silicon by a Simple Structuring Process for Sunlight-assisted Water Splitting

Author(s): Santinacci, Lionel: Diouf, Ma�mouna W: Barr, Ma�ssa K S: Fabre, Bruno: Joanny, Loic: Gouttefangeas, Francis: Loget, Gabriel

Published: 2016

Web link: http://pubs.acs.org/doi/abs/10.1021/acsami.6b07350

Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors

Author(s): Salomone, L Sambuco, Lipovetzky, J, Carbonetto, S H, Garc�a Inza, M A, Redin, E G, Campabadal, F and Faigon, A

Published: 2016

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0040609016000109

A comparison between HfO2/Al2O3 nano-laminates and ternary HfxAlyO compound as the dielectric material in InGaAs based metal-oxide-semiconductor (MOS) capacitors

Author(s): Krylov, Igor, Pokroy, Boaz, Eizenberg, Moshe and Ritter, Dan

Published: 2016

Web link: http://scitation.aip.org/content/aip/journal/jap/120/12/10.1063/1.4962855

Tensile strain induced narrowed bandgap of TiO2 films: Utilizing the two-way shape memory effect of TiNiNb substrate and in-situ mechanical bending

Author(s): Du, Minshu, Cui, Lishan and Wan, Qiong

Published: 2016

Web link: http://linkinghub.elsevier.com/retrieve/pii/S0921510716000210

Optical Properties of HfO2 Thin Films Grown by Atomic Layer Deposition

Author(s): Drazdys, Ramutis: Stai?i?nas, Laurynas: Leinartas, Konstantinas: Buzelis, Rytis: Tolenis, Tomas: Juskevicius, Kestutis: Gimzevskis, Ugnius: Selskis, Algirdas: Jasulaitiene, Vitalija

Published: 2016

Web link: https://www.osapublishing.org/abstract.cfm?URI=OIC-2016-WB.2

Surface chemistry and initial growth of Al2O3 on plasma modified PTFE studied by ALD

Author(s): Krumpolec, Richard: Cameron, David C.: Homola, Tom�?: ?ern�k, Mirko

Published: 2016

Web link: http://linkinghub.elsevier.com/retrieve/pii/S2468023016300529