Veeco SiC CVD

Powerful Technology for R&D Silicon Carbide Applications

Best Performance, Ease-of-Use

Next-Generation Device Capabilities Broadest Process Window

Fast, Preventive Maintenance in 5 easy steps  < 1 hour

2-chamber configuration for separate N and P doping

Pre-heating and cool-down stations for more efficient processing

Compatible with multiple, seamlessly interchangeable wafer sizes

Gas flow tuning through 3-zone gas injector