Ion Beam Etch

Etch System

Ion Beam Etch: Ensuring Precise Material Removal

When it comes to clean etches, Veeco’s Ion Beam Etch (IBE) systems deliver with sharp control and minimal disruption. Using a focused argon ion beam, this subtractive technique etches nanoscale features with precision, making it a go-to for pattern transfer, layer removal, and surface refinement where edge definition matters most.

A Process That Puts You in Control

IBE systems direct a high-energy ion beam at the material surface, sputtering away atoms, and carving out clean, directional etch profiles. Meanwhile, engineers can adjust beam angle, energy, and current to tune the process—shaping etch depth, sidewall angle, and material selectivity as needed.

Where IBE Makes Its Mark

Ion Beam Etch is ideal for:

• Patterning delicate, high-resolution features in advanced ICs
• Removing specific layers in multi-material stacks
• Creating smooth, directional etches for photonic and MEMS devices

Veeco: Repeatable Success

Our NEXUS® IBE™ Ion Beam Etching System gives engineers full control over every detail, including beam incidence, energy distribution, and real-time monitoring. Whether in R&D or production, our systems make it easy to achieve repeatable, low-damage results across a wide range of materials and applications. Etch precise, complex features for high-yield production of discrete microelectronic devices and components with the NEXUS® Ion Beam Etch (IBE) Systems.