ALD Materials

ALD Materials

Chemists have synthesized many exciting new precursors for ALD and have created a large number of atomic layer deposition materials, such as coatings with improved properties for metals, semiconductors, insulators, oxides, nitrides, dielectrics, magnetic, and refractive coatings.

ALD Materials: Essential to All Next-Generation Devices

From high-k dielectrics to advanced metals, the materials used in atomic layer deposition play a critical role in building better, smaller and more powerful devices. Understanding their properties and how they behave in ALD processes is key to unlocking performance across semiconductors, sensors, energy storage and more.

Inside the ALD Materials Toolkit

 

• Dielectrics include high-k oxides, like Al₂O₃ and HfO₂, and are used in gate stacks to boost capacitance and reduce leakage. Meanwhile, nitrides, like AlN and SiN, create robust barriers and can function as insulators or semiconductors.

 

• On the conductive side, precious metals such as Pt and Ru serve as catalytic and electrode surfaces, while transition metals like W and Ti offer strong conductivity and adhesion for interconnects.

 

• For more complex needs, chalcogenides (e.g., GST) power phase-change memory, and III-V materials, like GaAs and InP, enable optoelectronic and high-speed applications.

Considerations When Choosing Materials:

• Make sure deposition temperatures align with device’s thermal limits, material stack
• Know how materials behave in complex structures (some offer superior step coverage)
• Find the right balance of conductivity, dielectric constant and bandgap to meet design goals

Veeco: Supporting the Modern Design

From CMOS logic to MEMS sensors and energy devices, our ALD systems support a wide range of high-performance materials. Explore detailed application notes, cross-sectional images and spec sheets to see how these materials power the next generation of design.