ALD Advantages

ALD Advantages

Atomic Level Control for Next-Gen Devices

Atomic Layer Deposition (ALD) stands out for one reason: control. The most significant advantages of thin film deposition via Atomic Later Deposition over other methods, are manifest in four distinct areas – film conformality, low temperature processing, stoichiometric control, and inherent film quality associated with the self-limiting, and self-assembled nature of the ALD mechanism ALD is exceptionally effective at coating surfaces that exhibit ultra high aspect ratio topographies, as well as surfaces requiring multilayer films with good quality interfaces technology. This thin-film process builds materials one atomic layer at a time, delivering unmatched uniformity and sub-nanometer precision, even on complex 3D structures. That level of accuracy makes ALD a critical technology for advanced semiconductor manufacturing, flexible electronics, and materials research.

Why Engineers Turn to ALD

ALD produces defect-free films that deliver consistent performance across high-aspect-ratio features like trenches, vias and stacked architectures. Engineers rely on it to fine-tune film thickness, enhance electrical performance and expand material integration across high-k dielectrics, metal nitrides and more.

Key ALD Benefits

Veeco: Consistency That Scales

Veeco’s ALD systems support everything from early-stage R&D to high-volume production. Our modular platform options and flexible chamber configurations help process teams meet tight specs and scale with confidence.

ALD for highly controllable thin films

  • Film thickness based on self-limiting, self assembled behavior, with nanometer level control
  • Stoichiometric control of multicomponent films
  • Films/Processes scalable over very large areas
  • Excellent repeatability
  • Wide process windows (with respect to temperature or precursor dose variations)
  • Low defect density
  • Amorphous or crystalline film types depending on substrate and temperature
  • Fine control of multilayer coatings, heterostructures, nanolaminates, mixed oxides, graded index layers, and doping
  • Standard recipes available for oxides, nitrides, metals, and semiconductors


Cu2S/SnS2/ZnS trilayer deposited in silicon trench. CZST film composition profile is analyzed by SIMS following different thermal anneals.
Ref: Thimsen et al, Chemistry of Materials, 24 (16), 3188-3196 (2013). doi:10.1021/cm3015463

ALD for highly controllable thin films

  • Excellent conformality, 100% step coverage: uniform coatings on flat, inside porous, and around particle samples
  • Atomically flat and smooth coating that conforms to the substrate geometry


Conformal deposition of Li5.1TaOz deposited by ALD in 300:1 AAO nanotemplate (470:1 final AR)
Ref: Liu, J. et al., J. Phys. Chem. C 117, 20260–20267 (2013).

ALD for challenging substrate

  • Gentle deposition process for sensitive substrates
  • Low temperature deposition possible (RT-800 °C)
  • Low power plasma processing (as low as 20-50W) capability
  • Coatings demonstrated on polymers, OLEDs, and noble metal surfaces
  • Excellent adhesion due to chemical bonds at the first layer
  • Low stress due to molecular self-assembly

Al2O3 – ZrO2 nanolaminate encapsulation with a water transmission rate (WVTR) of 5E-7g/m2/day at room temperature – deposited in Savannah® at 80˚C
Ref: Meyer, J., et al. (2009). Applied Physics Letters, 94(23), 233305