Veeco’s EpiStride CVD System for SiC Epitaxy: Quality
| Epitaxial Quality Thickness and doping uniformities are critical factors in the performance of any silicon carbide (SiC) device. Achieving uniform thickness and doping is essential for optimizing device performance, increasing device reliability, and improving device yield. Veeco’s EpiStride system reliably produces SiC epitaxial films of the highest quality as measured by uniformity of both layer thickness and doping. As shown here, epi layers with standard thicknesses of 10-15 mm can be processed with industry-leading thickness non-uniformities well below 1% and doping non-uniformities below 2%. Furthermore, this performance is achieved repeatable throughout a campaign cycle in-between routine cleaning and maintenance operations. Next: Ease of Use EpiStride Home
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