Introducing Propel for Gallium Nitride (GaN) Epitaxy

Built on Veeco’s Proven TurboDisc Technology to Accelerate Process Development for Next Generation Devices

Veeco’s Propel™ R&D MOCVD system is designed as a flexible platform for early stage research and development and small production needs for nitride applications. The reactor is capable of processing 9×2”, 3×4”, 1×6” and 1×8” on various substrates such as silicon, sapphire and silicon carbide without any hardware modification between runs.

• Single-wafer reactor platform
• Based on Veeco’s leading TurboDisc MOCVD technology
• Capable of processing four, six, and eight-inch wafers

Propel Single Wafer MOCVD System

Outstanding Uniformity and Repeatability

• TurboDisc technology provides homogeneous laminar flow and uniform temperature across entire wafer
• Excellent within-wafer and run-to-run uniformities without tuning (Std. Dev. < 0.7%)
• Stable and repeatable performance over long campaigns (>120 runs) without tuning or maintenance
• High yield for power electronics and RF applications

Simple and Modular Design

• Simple single reactor enables easy tuning and operation
• Large process window for process optimization
• High Efficiency and flexibility

Fast Cycles of Learning

• Ease of tuning (hands-free operation) allows for rapid process optimization
• Long campaign runs provide process development flexibility and best-in-class low particle performance
• Flexibility of wafer size allows for seamless process transfer to larger substrates