Veeco’s Propel™ Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer reactor platform, capable of processing six- and eight-inch wafers, the system deposits high-quality GaN films for the production of highly efficient power electronic devices. The single-wafer reactor is based on Veeco’s leading TurboDisc® design with breakthrough technology, including the new IsoFlange™ and SymmHeat™ technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco K465i™ and MaxBright™ systems to the Propel Power GaN MOCVD platform.
Veeco's Propel technology was featured in Compound Semiconductor Magazine. Click here to read Mastering MOCVD of GaN HEMTs
Access basic process information on how to grow a GaN HEMT structure on a Veeco® Propel® TurboDisc® MOCVD tool on a 200mm (8”) Silicon substrate. This information is not designed, intended, recommended, nor authorized for use in any type of commercial system or application.
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