Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially grown on Si0. 8Ge0. 2/Si Substrates - Veeco

Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially grown on Si0. 8Ge0. 2/Si Substrates

| Apr 02, 2020

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