Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

Apr 02, 2020

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Global Semiconductor Company Selects Veeco MOCVD Platform for GaN-Based Power Electronics and 5G RF Devices

Plainview, N.Y. — Veeco Instruments Inc. (NASDAQ: VECO) today announced that Transphorm, Inc. (OTCQB:TGAN), a global supplier of gallium…
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Global Semiconductor Company Selects Veeco MOCVD Platform for GaN-Based Power Electronic and 5G RF Devices

PLAINVIEW, N.Y., Nov. 30, 2020 (GLOBE NEWSWIRE) —
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Veeco Announces Exchange Transaction to Retire $125 Million of Its 2.70% Convertible Senior Notes Due 2023

Plainview, N.Y., November 12, 2020 — Veeco Instruments Inc. (“Veeco”) (NASDAQ: VECO) today announced that it has entered into…
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OSRAM Selects Veeco’s Lumina MOCVD System for High-End LED Production and to Drive Next Generation Products

PLAINVIEW, N.Y.– Veeco Instruments Inc. (NASDAQ: VECO) today announced that OSRAM Opto Semiconductors, a leading manufacturer of optoelectronic components,…
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