Get optimal conditions for GaN growth of electronic and optoelectronic materials, plus unrivaled plasma stability and reproducibility, with Veeco's Uni-Bulb RF Plasma Source. One-piece PBN gas inlet tube and plasma bulb combines with dual coaxial RF coil for excellent power coupling and heat removal. Several design options, including customized aperture plates, are available to enhance performance further.
A gas plasma is an effective tool for conversion of highly stable source gases such as N2 or H2 to more active atomic and molecular species suitable for MBE growth. The Veeco UNI-Bulb features a patented one-piece PBN gas inlet tube and plasma bulb to eliminate gas leakage around the bulb. The resulting plasma is highly stable and reproducible, allowing many hours of run time without source re-tuning.
Interchangeable aperture plates are available in configurations of varying gas conductance for growth of GaN, mixed As/N materials, nitrogen doping, hydrogen cleaning and hydrogen assisted growth. The exit hole design minimizes ion content in the beam, while the active neutral species (atomic and molecular) are directed toward the substrate. Customized high uniformity aperture plates are available for most commercial MBE systems enabling typical uniformity of ±1%.
The Veeco UNI-Bulb RF Plasma Source is the world’s most popular for nitride growth by MBE. It provides optimal conditions for nitride growth, as proven by its record-setting results for electronic and optoelectronic applications.
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