MOCVD Systems

MOCVD Systems

Propel Power GaN MOCVD System for Power Electronics

Propel Power GaN MOCVD System for Power Electronics

Single-Wafer Reactor Technology to Enable Efficient, GaN-Based Power Devices

Veeco’s Propel™ Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer reactor platform, capable of processing six- and eight-inch wafers, the system deposits high-quality GaN films for the production of highly efficient power electronic devices. The single-wafer reactor is based on Veeco’s leading TurboDisc® design with breakthrough technology, including the new IsoFlange™ and SymmHeat™ technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco K465i™ and MaxBright™ systems to the Propel Power GaN MOCVD platform.

  • Outstanding film uniformity, yield and device performance
  • Features long campaign runs and low particle defects for exceptional yield and flexibility
  • Fast cycles of learning accelerate GaN-on-Si R&D transition to high-volume manufacturing
  • Modular design for ease of configuration, operation and maintenance

 

Click here to access basic process information on how to grow a GaN HEMT structure on a Veeco® Propel® TurboDisc® MOCVD tool on a 200mm (8”) Silicon substrate.  This information is not designed, intended, recommended, nor authorized for use in any type of commercial system or application.

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