Veeco’s Propel™ Power GaN MOCVD system is designed specifically for the power electronics industry. Featuring a single-wafer reactor platform, capable of processing six- and eight-inch wafers, the system deposits high-quality GaN films for the production of highly efficient power electronic devices. The single-wafer reactor is based on Veeco’s leading TurboDisc® design with breakthrough technology, including the new IsoFlange™ and SymmHeat™ technologies that provide homogeneous laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco K465i™ and MaxBright™ systems to the Propel Power GaN MOCVD platform.
Click here to access basic process information on how to grow a GaN HEMT structure on a Veeco® Propel® TurboDisc® MOCVD tool on a 200mm (8”) Silicon substrate. This information is not designed, intended, recommended, nor authorized for use in any type of commercial system or application.
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