The Veeco/CNT Fiji® has been at the forefront of recent advances in III-V devices. This includes deposition of III-V materials like AlN, InN and GaN via atomic layer epitaxy (ALE), epitaxial growth of device quality ternary compounds like AlxGa1-xN and InlxAl1-xN, deposition of buffer layers to enable hetero-epitaxy and growth of gate dielectrics and passivation layers
Epitaxial growth of device quality AlN , InN  and GaN  has recently been demonstrated in an Veeco/CNT Fiji®. In Fig.1 below, HRTEM and IFFT confirms crystalline InN aligned with a-sapphire. Fig.2 shows the high quality of AlN grown on GaN – the FWHM of the rocking curve is 670 arc sec for a 37nm film – this is comparable to 1.6μm grown by MBE (420 arc sec) .
High Electron Mobility Transistor is based on formation of a high mobility 2D electron gas at interface between lattice-matched semiconductors. Table-1 shows low carrier concentration and high mobility in an all ALD HEMT device (ALE GaN/ALE AlGaN/ALD Al2O3) indicating the presence of the 2D electron gas. Additionally, HEMT device performance improvement has been shown  due to surface passivation by ALE-AlN. Hybrid graphene/III-N heterostructures have been grown  enabled by the low temperature of ALD which preserves the surface functionalization of graphene.
Figure 1: InN on sapphire 
Figure 2: Peaks from AlN/GaN/a-sapphire 
|Sample||μ (cm2/V-s)||Ns (cm-2)|
|AlGaN / GaN||1042||1.6 x 1012|
|Al2O3 / Al0.27Ga0.73N / GaN||871||6.0 x 1011|