Atomic Layer Deposition (ALD) has the potential to optimize product design across a wide array of applications -- from making silicon chips run faster, to increasing the efficiency of solar panels, to improving the safety of medical implants.
Thin films, strong adhesion characteristics, and reproducible results of ALD make it ideal for many research labs and large batch manufacturing environments.
The ability to produce thin films to exacting standards makes ALD a compelling solution for depositing high-quality films to challenging substrates, such as heterostructures, nanotubes, and organic semiconductors.
Many technologists and researchers are replacing older deposition techniques such as evaporation, sputtering, and chemical vapor deposition with ALD to take advantage of its unique ability to produce conformal coating in and around 3D objects in a highly consistent manner.
Due to the self-limited nature of ALD chemical reactions, unprecedented thickness conformallity can be achieved over the most challenging 3D nanostructures. As a result, ALD has become the technique of choice to deposit a wide array of thin films to fill cavities and trenches, obtain nanowires and nanotubes, conformally coat high aspect ratio nanotemplates and high surface area nanoparticles.
The Veeco/CNT Fiji® has been at the forefront of recent advances in III-V devices. This includes deposition of III-V materials like AlN, InN and GaN via atomic layer epitaxy (ALE), epitaxial growth of device quality ternary compounds like AlxGa1-xN and InlxAl1-xN, deposition of buffer layers to enable hetero-epitaxy and growth of gate dielectrics and passivation layers
Veeco Cambridge Nanotech provides optimal ALD solutions toward all solid-state 3D Li-ion batteries: fully optimized Lithium oxide thin films with low contamination, tunability of the composition for ternary and quaternary lithiated films, in-situ diagnostic for rapid process optimization and film characterization.
halcogenide materials consist of at least one chalcogen anion (group 16 element), in particular sulfide, selenide, and telluride, shown in red. The transition metals chalcogenides consist of a transition metal (d-block elements) bonded with a chalcogenide (S, Se, Te).
Atomic layer deposition has been around for decades but it was the efforts to integrate ALD high-k materials as a gate dielectric in logic devices and a capacitor dielectric in DRAM that inspired the research community to master the technique and expand its range of uses.
Encapsulation and barrier layers are one of the most striking success stories of ALD and are now used in production to fulfill stringent applications such as OLED or flexible electronics. ALD can deliver uniquely dense pinhole-free films making it the technique of choice to obtain high-quality ultra-thin moisture barrier layers and anti-oxidation films.
The Savannah® SAMS kit option enables the deposition of a wide range of organic monolayers via self-assembly in vapor phase. Due to the self-limited nature of SAMS deposition in vapor phase, SAMS films are highly conformal and uniform even over the more stringent 3D nanostructures.
Water splitting technology is characterized by a process that uses a chemical reaction to separate water (H2O) into oxygen and hydrogen. Effective water splitting can be achieved using a number of different techniques including electrolysis, photosynthesis, photoeclectrochemical, photocatalytic, radiolysis, photobiological, and thermolysis.