The most significant advantages of thin film deposition via Atomic Later Deposition over other methods, are manifest in four distinct areas – film conformality, low temperature processing, stoichiometric control, and inherent film quality associated with the self-limiting, and self-assembled nature of the ALD mechanism ALD is exceptionally effective at coating surfaces that exhibit ultra high aspect ratio topographies, as well as surfaces requiring multilayer films with good quality interfaces technology.
Conformal deposition of Li5.1TaOz deposited by ALD in 300:1 AAO nanotemplate (470:1 final AR)
Ref: Liu, J. et al., J. Phys. Chem. C 117, 20260–20267 (2013).
Al2O3 – ZrO2 nanolaminate encapsulation with a water transmission rate (WVTR) of 5E-7g/m2/day at room temperature – deposited in Savannah® at 80˚C
Ref: Meyer, J., et al. (2009). Applied Physics Letters, 94(23), 233305