Maximize slider yields and achieve excellent ion beam etch uniformity with the NEXUS® IBE-420Si™ Ion Beam Etching System. The NEXUS IBE-420Si System offers unsurpassed uniformity over a wide range of energy and process angles, making it ideal for etch depth control of next-generation ABS step and cavity processing.
- Superior uniformity and improved etch depth control
- Highest throughput and reduced footprint for lowest cost of ownership
- Easily integrates with common technologies on world-class NEXUS hardware and software platform
- New NEXUS 420 Ion Source improves etch uniformity and process repeatability
- Also available with RF350 source for operations that have process-qualified use of RF350 source
- Platform can be cost-effectively field-upgraded to NEXUS 420 Ion Source