Low Temperature Gas Source

Economical introduction of source gases without pre-cracking

Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco's low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr₄ for carbon doping in GaAs and NH₃ for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance your system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.

• Introduces gas without thermal pre-cracking
• CBr₄ source for C doping in III-Vs
• Complete CBr₄ gas handling system offers precise control of dopant evaporation and incorporation
• More than 50 in the field