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Select the MBE Components that's right for you.
  • Substrate Heaters
    Substrate Heaters
  • MBE Linear Motion Shutters
    MBE Linear Motion Shutters
  • Gas Source Delivery System
    Gas Source Delivery System
  • Phosphorus Recovery System
    Phosphorus Recovery System
  • CBr4 Gas Flow Control System
    CBr4 Gas Flow Control System
  • Phosphorus Valved Cracker Temperature Controller
    Phosphorus Valved Cracker Temperature Controller
  • Automated Valve Positioner
    Automated Valve Positioner
  • Growth Stage Positioner
    Growth Stage Positioner
  • UNI-Bulb RF Plasma Source Autotuner
    UNI-Bulb RF Plasma Source Autotuner
  • MBE Software
    Growth Control & Scheduling Software for MBE Systems
  • DC Power Supply with PID Temperature Controller
    DC Power Supply with PID Temperature Controller
  • MBE Crucible
    MBE Crucibles
  • MBE Heated Viewports
    MBE Heated Viewports
  • MBE Source Flanges
    MBE Source Flanges
  • MBE System Cables
    MBE System Cables
  • UNI-Block MBE Substrate Holders
    UNI-Block MBE Substrate Holders
  • Oxygen Pressure Control System

MBE Source Flanges

MBE Source Flanges

For deposition processes in UHV reactors

You obtain the ability to add molecular beam epitaxy (MBE)-type deposition capabilities to ultra-high vacuum (UHV) reactors with Veeco Source Flanges. The flanges are compatible with many MBE sources and application, and are available in a wide variety of source flange styles, including the most common in use today. A wide variety of options is available for added flexibility.


  • Allows users to add high-quality MBE-type deposition capabilities to UHV reactors
  • Flanges are compatible with many MBE sources and can help grow many types of epitaxial films -- applicable to many laboratory or production needs
  • Available in many different source flange styles, including the most common ("source-to-substrate" distances ~4"-10"/102mm-254mm)
  • Wide range of product options available -- users can choose desired outside diameter of main flange, number of cell ports, and source-to-substrate distance
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