NEXUS IBE-420i Ion Beam Etching System
Higher device yields through improved CD Sigma control
Raise data storage device yields and achieve exceptional uniformity with the NEXUS IBE-420i Ion Beam Etching System. It offers improved CD sigma control for data storage applications, faster time to market for new applications, faster install time, and better asset utilization and cost of ownership.
- Description
- Application
Notes
NEXUS 420i Ion Beam Etching System
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- Designed to meet tigher etch depth control requirements
- NEXUS ion source provides exceptional WIW rotated and 3D etch uniformity
- Easily integrates with common technologies on world-class NEXUS hardware and software platform
- Combined with an enhanced control system, NEXUS ion source offers excellent WTW and RTR repeatability
- Available in single or dual cluster configurations
- Backward-compatible to existing Veeco device-net cluster front ends
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Contact Veeco for detailed specifications
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To view and download application notes pdf files, select the title below. If you can't view the pdf,
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- Cost-Effective Thin-Film Bulk Acoustic Resonator (FBAR) Production
- Advanced Sensor Fabrication Using Integrated Ion Beam Etch and Ion Beam Deposition Processes
- Applications of Reactive Ion Beam Etching to Thin Film Magnetic Head Track-Width Trimming
- Reactive Ion Beam Etching of InP
