Epitaxial Equipment
MOCVD Systems - Systems

Features:

• Uniform FlowFlange® technology results in superior uniformity and repeatability
• Low maintenance TurboDisc technology enables highest system availability

Benefits:

• Lowest cost of ownership GaN MOCVD system
• Industry's highest productivity due to full automation and one-run recovery period after maintenance

  Features:

• Shares its platform with the proven Veeco K300 MOCVD system -- designed for superior throughput
• Advanced TurboDisc^® reactor technology, high velocity laminar flow, and clean operation eliminates the need for in-situ bakes

  Benefits:

• Delivers the industry's highest throughput for high-volume production of GaN-based blue and green LEDs and blue lasers
• Automated platform produces more profit for HB-LED manufacturers while controlling capital cost
• Excellent production yields, uniformity, and repeatability

Features:

• Low maintenance TurboDisc technology enables highest uptime
• Vacuum loadlock minimizes idle time for highest production throughput
• RealTemp 200 temperature control ensures accurate process reproducibility
• FlowFlange enables excellent uniformity and repeatability for high production yield

Benefits:

• Highest volume of triple junction solar cells
• Highest profit for triple junction solar cell manufacturers
• Excellent uniformity, high throughput and exceptional production yields
• Module design for ease of maintenance and upgradeability
• Fast thermal ramping and high growth rates

  Features:

• Industry's leading throughput for high-volume production of multi-junction III-V concentrator solar cells, HB-LEDs, laser diodes, pHEMTs and HBTs
• Low-maintenance TurboDisc^® technology enables highest uptime
• Integrated RealTemp^® 200 technology provides direct wafer temperature control, fast gas switching and strict control of interface abruptness

  Benefits:

• Ideal for mass production of HB-LED and concentrator solar cells
• Superior material quality and process efficiency plus high productivity
• High return on investment for HB-LEDs and III-V concentrator solar cells

  Features:

• In-situ monitoring plus user-friendly control and monitoring software package for real-time temperature and growth rate calibration
• Advanced growth chamber heating components
• Gas line purifiers remove particulate, moisture and molecular contaminants

  Benefits:

• Accurate, precise reactant delivery and strict control of uniformity
• Casette elevator holds up to 3 wafer carriers for transfer to growth chamber
• Maximum throughput and accuracy; minimized downtime and maintenance
• Rapid heat up/cool down times between runs

  Features:

• Cassette elevator holds up to 3 wafer carriers for transfer to growth chamber; multiple wafer carrier options available
• Advanced growth chamber components
• Patented FlowFlange technology
• Gas line purifiers remove contaminants

  Benefits:

• Precise reactant delivery and strict control of uniformity, layer thickness and interface abruptness
• Minimal particulate accumulation and low maintenance operation
• Reduced operation costs and optimum device yield with reduced risk of contamination
• Fast heat up/cool down times between runs

Features:

• Specially designed for high-volume production of lasers, VCSELs, and InP-based materials
• Advanced growth chamber heating components
• Integrated glove box for loading/unloading wafers

Benefits:

• High throughput, low maintenance and reduced risk of contamination
• Precise reactant delivery and strict control of uniformity, layer thickness and interface abruptness
• Optimized device yield and repeatability
• Fast heat up/cool down times between runs

  Features:

• Engineered for high-volume production of molecular beam epitaxy materials
• Features next-generation growth chamber and FlowFlange^® technology including vertical chamber configuration
• Allows in-situ monitoring and control of wafer temperature during production runs

  Benefits:

• Repeatability and reliability levels formerly unavailable for large-scale MOCVD production
• Exceptional material quality, thickness, doping, process efficiency, and throughput
• Precise control of reactant delivery, uniformity, layer thickness and interface abruptness
• Reduced contamination risk

Features:

• Incorporates latest developments in MOCVD technology
• Versatile -- can deposit a range of semiconductor materials, metals, and oxides
• Smooth and stable flow conditions due to optimal control of growth chamber pressure, gas flow and rotation speed
• User-friendly monitoring and control ensures stable run-to-run temperatures

Benefits:

• The most flexible and powerful tool available for research-level epitaxial deposition
• Vertical growth chamber configuration for low maintenance and high uptime
• Precise reactant delivery and strict control of uniformity, layer thickness and interface abruptness
• Optimized device yield, throughput, and repeatability

Features:

• The only fully automated MOCVD platform available today
• High velocity laminar flow and clean operation of TurboDisc^® technology eliminates the need for in-situ bakes
• Production-proven GaNzilla II reactor plus a platform specifically designed for expandability and configurability

Benefits:

• Ideal for producing GaN-based materials for blue and green LEDs and blue lasers
• Expandable, flexible and configurable
• Excellent production yields and high throughput
• Allows simple and cost-effective performance upgrades plus 20% -30% more profit potential