NEXUS IBE-420Si Ion Beam Etching System
Unsurpassed uniformity over multiple energy and process angles
Maximize slider yields and achieve excellent ion beam etch uniformity with the NEXUS IBE-420Si Ion Beam Etching System. The NEXUS IBE-420Si System offers unsurpassed uniformity over a wide range of energy and process angles, making it ideal for etch depth control of next-generation ABS step and cavity processing.
- Description
- Application
Notes
NEXUS 420Si Ion Beam Etching System
|
|
More Information |
| |
- Superior uniformity and improved etch depth control
- Highest throughput and reduced footprint for lowest cost of ownership
- Easily integrates with common technologies on world-class NEXUS hardware and software platform
- New NEXUS 420 Ion Source improves etch uniformity and process repeatability
- Also available with RF350 source for operations that have process-qualified use of RF350 source
- Platform can be cost-effectively field-upgraded to NEXUS 420 Ion Source
|
|
Contact Veeco for detailed specifications
|
To view and download application notes pdf files, select the title below. If you can't view the pdf,
Get Adobe Reader.
- Cost-Effective Thin-Film Bulk Acoustic Resonator (FBAR) Production
- Advanced Sensor Fabrication Using Integrated Ion Beam Etch and Ion Beam Deposition Processes
- Applications of Reactive Ion Beam Etching to Thin Film Magnetic Head Track-Width Trimming
- Reactive Ion Beam Etching of InP
