Epitaxial Equipment : MOCVD Systems

Pioneer P125 MOCVD System

R&D MOCVD system deposits a wide range of materials

Get metal organic chemical vapor disposition (MOCVD) capabilities for a wide range of semiconductor materials, metals, and oxides with the fully configured Veeco Pioneer P125. This research reactor incorporates the latest MOCVD technological developments plus Veeco's patented TurboDisc^® platform, and is ideal for the growth of III-V/N materials. High efficiency, low material consumption, and minimal downtime enables cost-effective epi growth for research-based programs.

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TurboDisc Pioneer P125 R&D MOCVD System		More Information

Industry-leading growth technology designed specifically for research-level epitaxial deposition FlowFlange® technology provides precise reactant delivery and strict control of uniformity, layer thickness and interface abruptness Supports both As/P and GaN growth and is fully compatible with TBA/TBP group V sources Optimized device yield, repeatability, and throughput		Contact Veeco for detailed specifications