MBE Sources
Specialty - Systems

Features:

• Provides optimal conditions for GaN growth
• One-piece PBN gas inlet tube and plasma bulb combined with innovative dual coaxial RF coil
• Interchangeable aperture plates available for GaN growth, mixed As/N materials, and N doping

Benefits:

• High-quality, dependable results for electronic and optoelectronic MBE applications
• Excellent power coupling and heat removal
• Unrivaled plasma stability and reproducibility
• Adaptable for many different applications and laboratory or production needs

Features:

• Specially designed to crack H₂ into atomic H for substrate cleaning and molecular beam epitaxy growth
• Tungsten heater filament positioned inside gas conductance tube -- designed for operation at 1800-2200°C
• MBE applications include two-dimensional growth in GaAs, enhancement of GaN growth rates, and selective epitaxy

Benefits:

• Ideally suited to demanding high-temperature MBE applications
• Compatible with most preparation and growth chambers
• Can be used as a surfactant to promote or enhance growth or for selective epitaxy

Features:

• Specially designed for source gases that require thermal cracking before arriving at MBE substrates
• Conventional single filament source heater for radiative heating of the tantalum or PBN cracking tube
• Optional PBN baffle enhances cracking efficiency

Benefits:

• Well suited for gas source molecular beam epitaxy union involving group V hydrides and group III organometallics
• Corrosion-resistant PBN baffle enhances cracking efficiency
• Design options include multiple gas inlets, up to three separate conductance tubes

Features:

• Large conductance tube
• Customizable diffuser end plate
• Band heater, external to vacuum, heats source temperature to <200°C range
• Option to combine on a single mounting flange with an Atomic Hydrogen Source or a conical Dopant Source
• Complementary CBr₄ Gas Flow Control System

Benefits:

• Economical solution to introduce a source gas without thermal pre-cracking
• Rapid gas switching
• Good growth uniformity
• Ideal  for CBr₄, NH₃, and other source gases that do not require thermal pre-cracking
• Allows for an efficient, controllable means to introduce CBr₄ gas into UHV environment