MBE Sources
Medium Temperature - Systems

Features:

• Special ammonia-resistant materials
• Suited to temperatures up to 1350°C with ammonia partial pressures as high as 1x10^-4 Torr
• Substrate heaters and SUMO crucibles can be added to further extend system performance

Benefits:

• High growth rates and ease of control using ammonia (NH₃) nitrogen sources
• Well adapted to high-ammonia, partial pressure environments
• Superior performance at high temperatures and partial pressures
• SUMO crucible optimizes flux distribution and minimizes depletion effects

Features:

• Oxygen-resistant sources suitable for temperatures up to 1150°C and oxygen partial pressures as high as 5 milliTorr
• Optional substrate heaters available for oxygen partial pressures of 5 milliTorr.
• Optional SUMO crucible available

Benefits:

• Adaptable to a wide variety of oxygen partial pressure MBE environments
• Increased campaign time and lower costs
• Source options provide extended performance, optimal flux distribution, and minimized depletion effects

Features:

• Patented crucible with cylindrical reservoir and small tapered orifice
• Heat-shielding cap
• Extremely stable operation
• Available for multi-wafer and single-wafer MBE systems

Benefits:

• Large crucible capacity, excellent flux uniformity, negligible shutter flux transients, and minimized long-term depletion effects
• Enhanced efficiency and minimized thermal load on the system
• Reduces long-term depletion effect seen with conical crucibles
• Excellent material quality with good thickness uniformity across substrate

Features:

• Combines dual filament source with asymmetric SUMO crucible
• Crucible features narrow offset orifice and tapered exit cone with hot-lip heating
• Substantially increases charge capacity for shallow upward-facing ports

Benefits:

• Large capacity and excellent flux uniformity
• Negligible shutter flux transients and minimized long-term depletion effects
• Extends MBE capabilities through increased charge capacity
• Proven superior material quality, low defect counts, and good thickness uniformity across substrate

Features:

• Designed specifically for Group III -- particularly Al -- MBE material evaporation
• Wide lip design beyond crucible orifice and heaters/heat shielding positioned for efficient crucible body heating
• Extended lip crucible further enhances cold zone and provides additional containment

Benefits:

• Large capacity, excellent flux uniformity, negligible shutter flux transients, and minimized long-term depletion effects
• Reliable containment of molten Al and nitride compounds
• Proven excellent material quality, low defect counts, and thickness uniformity across substrate

Features:

• Two independent heater filaments for crucible base and tip orifice
• Source tip region is heated to higher temperatures than the base
• "Hot-lip" heating of Ga and In MBE sources eliminates recondensation at crucible lip
• Dual Filament Sources are available for use with both SUMO and conventional crucibles, including  Group III production crucibles

Benefits:

• Optimized MBE thermal profile for various materials and adjustments for decreasing fill level
• Compensates for radiative heat loss and prevents recondensation at crucible lip
• Ideal for growing high-quality Ga- and In-containing materials
• Easily adapted to many different MBE applications

Features:

• Reliable band thermocouples and single heater filaments for MBE operation in 750-1200°C range
• Standard Filament Source features single uniformly distributed filament for uniform heating
• The Modified Filament Source provides extra heating at crucible orifice
• Cold-Lip Single Filament Source provides reduced heating at crucible orifice

Benefits:

• Various system configurations available for specialized needs
• Standard Filament Source offers cost-effective solution for general-purpose MBE
• Modified Filament Source can reduce Ga/In oval defects
• Cold-Lip Source design prevents charge overflow and protects source